The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 24, 2009

Filed:

Jul. 06, 2006
Applicants:

Somit Talwar, Los Gatos, CA (US);

David A. Markle, Saratoga, CA (US);

Inventors:

Somit Talwar, Los Gatos, CA (US);

David A. Markle, Saratoga, CA (US);

Assignee:

Ultratech, Inc., San Jose, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/477 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method for performing laser thermal annealing (LTA) of a substrate using an annealing radiation beam that is not substantially absorbed in the substrate at room temperature. The method takes advantage of the fact that the absorption of long wavelength radiation (1 micron or greater) in some substrates, such as undoped silicon substrates, is a strong function of temperature. The method includes preheating a portion of the substrate to a critical temperature where the absorption of long-wavelength annealing radiation is substantial, and then irradiating the portion of the substrate with the annealing radiation to generate a temperature capable of annealing the portion of the substrate.


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