The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 24, 2009
Filed:
Nov. 03, 2006
Naoki Yokoi, Chuo-ku, JP;
Naoki Yokoi, Chuo-ku, JP;
Elpida Memory, Inc., Tokyo, JP;
Abstract
A method for production of a semiconductor device including the steps of: forming a gate insulating film, a polysilicon film and a first insulating film on a silicon substrate; patterning the first insulating film; forming a metal film; forming a silicide layer by reacting the polysilicon film with the metal film; forming a second insulating film after removing an unreacted metal film; removing the second insulating film such that the first insulating film is exposed and the second insulating film remains on a region which is not covered with the first insulating film; forming a gate electrode having a silicide layer on the upper layer side and a polysilicon layer on the lower layer side by carrying out etching using the second insulating film as a mask after removing the first insulating film; forming a third insulating film on the side surface of the gate electrode; and forming an interlayer insulating film and forming a contact hole therein.