The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 17, 2009
Filed:
Jun. 02, 2005
Applicant:
James Word, Portland, OR (US);
Inventor:
James Word, Portland, OR (US);
Assignee:
Other;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 17/50 (2006.01);
U.S. Cl.
CPC ...
Abstract
A system for creating mask layout pattern data in order to create a number of desired features on a semiconductor wafer. Critical features and features that are adjacent to or abut critical features are formed as phase shifting regions on a mask. Larger, non-critical features can be formed as annular rim shifters and may include one or more filling phase shifting regions. Non-critical features that are not adjacent to critical features and/or sub-resolution features that are not desired to print on the wafer can be formed as opaque or partially transparent regions on the mask.