The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7492018 B1

PDF
Full Text
Expired
Date of Patent:
Feb. 17, 2009

Filed:

Mar. 24, 2005
Applicants:

Wai-yi Lien, Hsin-Chu, TW;

Denny Duan-lee Tang, Saratoga, CA (US);

Inventors:

Wai-Yi Lien, Hsin-Chu, TW;

Denny Duan-lee Tang, Saratoga, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/76 (2006.01); H01L 29/47 (2006.01);
U.S. Cl.
CPC ...
Abstract

An integrated circuit structure for isolating substrate noise and a method of forming the same are provided. In the preferred embodiment of the present invention, a semi-insulating region is formed using proton bombardment in a substrate between a first circuit region and a second circuit region. Two guard rings are formed along the semi-insulating region, each on a side. A backside semi-insulating region is formed through proton bombardment from the back surface of the substrate into the substrate. The backside semi-insulating region is preferably connected with the semi-insulating region. A grounded guard layer is preferably formed on the backside semi-insulating region.


Find Patent Forward Citations

Lien, Wai-Yi. (2009). Isolating substrate noise by forming semi-insulating regions (U.S. Patent No. 7492018). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7492018

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