The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 17, 2009
Filed:
Dec. 23, 2005
George D. Papasouliotis, Sunnyvale, CA (US);
Seon-mee Cho, San Jose, CA (US);
Ron Rulkens, Milpitas, CA (US);
Mihai Buretea, San Francisco, CA (US);
Dennis M. Hausmann, Los Gatos, CA (US);
Michael Barnes, San Ramon, CA (US);
George D. Papasouliotis, Sunnyvale, CA (US);
Seon-Mee Cho, San Jose, CA (US);
Ron Rulkens, Milpitas, CA (US);
Mihai Buretea, San Francisco, CA (US);
Dennis M. Hausmann, Los Gatos, CA (US);
Michael Barnes, San Ramon, CA (US);
Novellus Systems, Inc., San Jose, CA (US);
Abstract
A metal- and metalloid-free nanolaminate dielectric film can be formed according to a pulsed layer deposition (PDL) process. A metal- and metalloid-free compound is used to catalyze the reaction of silica deposition by surface reaction of alkoxysilanols. Films can be grown at rates faster than 30 nm per exposure cycle. The invention can be used for the deposition of both doped (e.g., PSG) and undoped silicon oxide films. The films deposited are conformal, hence the method can accomplish void free gap-fill in high aspect ratio gaps encountered in advanced technology nodes (e.g., the 45 nm technology node and beyond), and can be used in other applications requiring conformal dielectric deposition.