The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 17, 2009
Filed:
Jun. 26, 2006
Applicants:
Naonori Fujiwara, Tokyo, JP;
Hiroyuki Kitamura, Tokyo, JP;
Inventors:
Naonori Fujiwara, Tokyo, JP;
Hiroyuki Kitamura, Tokyo, JP;
Assignee:
Elpida Memory, Inc., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/31 (2006.01); H01L 21/469 (2006.01);
U.S. Cl.
CPC ...
Abstract
A process for manufacturing semiconductor devices in an in-line processing includes the steps of: forming a silicon nitride film on a semiconductor wafer by nitrization in a reactor chamber having an inner pressure at a specific pressure; reducing the inner pressure from the specific pressure; raising the inner pressure up to the specific pressure; replacing the semiconductor wafer with another semiconductor wafer; and forming a nitride film on the another semiconductor wafer at the specific pressure.