The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 17, 2009
Filed:
Sep. 09, 2005
Maud Vinet, Grenoble, FR;
Pascal Besson, Notre Dame de Mesage, FR;
Bernard Previtali, Grenoble, FR;
Christian Vizioz, Saint Pierre de Mesage, FR;
Maud Vinet, Grenoble, FR;
Pascal Besson, Notre Dame de Mesage, FR;
Bernard Previtali, Grenoble, FR;
Christian Vizioz, Saint Pierre de Mesage, FR;
Commissariat a l'Energie Atomique, Paris, FR;
ST Microelectronics SA, Montrouge, FR;
Abstract
A process for fabricating a transistor that includes a gate located in the immediate proximity of a dielectric includes a step of etching a layer of gate material. The gate etching step includes plasma etching of the gate layer over the major portion of its thickness so as to laterally define the gate and chemical etching of a residual portion of the gate layer so as to define the gate as far as the dielectric.