The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 17, 2009
Filed:
Jan. 30, 2006
Chun Fu Chen, Taipei, TW;
Yung Tai Hung, Chiayi, TW;
Chi Tung Huang, Hsinchu, TW;
Chen Wei Liao, Nantou, TW;
Chun Fu Chen, Taipei, TW;
Yung Tai Hung, Chiayi, TW;
Chi Tung Huang, Hsinchu, TW;
Chen Wei Liao, Nantou, TW;
Abstract
A method for forming shallow trench isolation structures is disclosed. The methods include providing a substrate having an upper surface and having an opening extending down from said upper surface, providing a first dielectric layer over at least a portion of the upper surface of the substrate and filling the opening, providing a second dielectric layer over the first dielectric layer, and removing portions of the first and second dielectric layers, wherein the first dielectric layer has a higher index of refraction than the second dielectric layer.