The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 10, 2009

Filed:

Jun. 15, 2007
Applicants:

Chun-hung Lin, Hsinchu, TW;

Yin-chang Chen, Hsinchu County, TW;

Inventors:

Chun-Hung Lin, Hsinchu, TW;

Yin-Chang Chen, Hsinchu County, TW;

Assignee:

eMemory Technology Inc., Hsin-Chu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 7/02 (2006.01);
U.S. Cl.
CPC ...
Abstract

A memory apparatus includes a plurality of memory units, a sensing circuit and a bias-generating circuit. The plurality of memory units respectively outputs a data current to the sensing circuit, while the sensing circuit further includes a plurality of first transistors, a plurality of second transistors and a plurality of sensing amplifiers. In order to speed up the access time of the memory units, the bias-generating circuit rapidly provides a bias signal to the sensing circuit to turn on the first transistors of the sensing circuit. In the present invention, the sensing circuit uses a common reference voltage to reduce the circuit utilization area of the memory apparatus.


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