The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 10, 2009
Filed:
Aug. 09, 2006
Kenzo Kurotsuchi, Tokyo, JP;
Norikatsu Takaura, Tokyo, JP;
Osamu Tonomura, Tokyo, JP;
Motoyasu Terao, Tokyo, JP;
Hideyuki Matsuoka, Tokyo, JP;
Riichiro Takemura, Tokyo, JP;
Kenzo Kurotsuchi, Tokyo, JP;
Norikatsu Takaura, Tokyo, JP;
Osamu Tonomura, Tokyo, JP;
Motoyasu Terao, Tokyo, JP;
Hideyuki Matsuoka, Tokyo, JP;
Riichiro Takemura, Tokyo, JP;
Renesas Technology Corp., Tokyo, JP;
Abstract
In a non-volatile phase change memory, information is recorded by utilizing a change in resistance of a phase change portion. When the phase change portion is allowed to generate Joule's heat and is held at a specific temperature, it goes into a state of a low resistance. When the gate voltage of a memory cell selection transistor QM is controlled to afford a low resistance state, the maximum amount of current applied to the phase change portion is limited by the application of a medium-state voltage to the control gate, thereby avoiding overheating of the phase change portion.