The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 10, 2009

Filed:

Dec. 08, 2006
Applicants:

Kayoko Shibata, Tokyo, JP;

Hiroaki Ikeda, Tokyo, JP;

Yoshihiko Inoue, Tokyo, JP;

Hitoshi Miwa, Tokyo, JP;

Tatsuya Ijima, Kanagawa, JP;

Inventors:

Kayoko Shibata, Tokyo, JP;

Hiroaki Ikeda, Tokyo, JP;

Yoshihiko Inoue, Tokyo, JP;

Hitoshi Miwa, Tokyo, JP;

Tatsuya Ijima, Kanagawa, JP;

Assignee:

Elpida Memory, Inc., Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/02 (2006.01);
U.S. Cl.
CPC ...
Abstract

As a defective contact recovery elements, a stacked semiconductor device include a parallel arrangement system in which signal paths are multiplexed, and a defective contact recovery circuit operable to switch a signal path into an auxiliary signal path. The parallel arrangement system is used in a case where the number of signals is small and a very high speed operation is required because of a serial data transfer. The defective contact recovery circuit is used in a case where the number of signals is large because of a parallel data transfer.


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