The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 10, 2009
Filed:
Jun. 09, 2006
Yong Soo Jung, Seoul, KR;
Seung Woo Jin, Icheon-si, KR;
Min Yong Lee, Seoul, KR;
Kyoung Bong Rouh, Goyang-si, KR;
Yong Soo Jung, Seoul, KR;
Seung Woo Jin, Icheon-si, KR;
Min Yong Lee, Seoul, KR;
Kyoung Bong Rouh, Goyang-si, KR;
Hynix Semiconductor Inc., Icheon-si, KR;
Abstract
Disclosed herein is an apparatus and method for partial ion implantation. The apparatus includes a wafer support, an ion beam irradiator capable of generating and irradiating an ion beam entering the wafer, and an ion beam exposure adjustor to adjust exposure of the wafer with respect to the ion beam according to regions of the wafer by setting an exposure opening via combination of ion beam shields for blocking the ion beam with respect to the wafer. The exposure opening enables the wafer to be partially exposed to the ion beam irradiated therethrough. With this apparatus, effective partial ion implantation can be performed to compensate variation of a threshold voltage Vt in a channel of a transistor, thereby providing more uniform characteristics of the transistor.