The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 10, 2009

Filed:

May. 24, 2004
Applicants:

Hideyuki Ohtake, Kariya, JP;

Makoto Yoshida, Nagoya, JP;

Koichiro Tanaka, Souraku-gun, JP;

Masaya Nagai, Kyoto, JP;

Inventors:

Hideyuki Ohtake, Kariya, JP;

Makoto Yoshida, Nagoya, JP;

Koichiro Tanaka, Souraku-gun, JP;

Masaya Nagai, Kyoto, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01N 21/31 (2006.01);
U.S. Cl.
CPC ...
Abstract

A reflection-type terahertz spectrometer includes an input optical path through which terahertz waves are propagated, an irradiating mechanism that irradiates a sample with terahertz waves propagated through the input optical path, an output optical path through which terahertz waves exiting from the irradiating mechanism are propagated, and a detector that receives and detects the terahertz waves propagated through the output optical path. The irradiating mechanism has at least one planar interface and a refractive index greater than that of a peripheral region contacting the planar interface and is disposed between the input optical path and the output optical path such that the terahertz waves propagated through the input optical path to be incident on the planar interface undergo total internal reflection at the planar interface, and the sample is disposed in the peripheral region contacting the planar interface of the irradiating mechanism. When the terahertz waves undergo the total internal reflection at the planar interface, the sample is irradiated with evanescent waves scattering from the planar interface to the peripheral region contacting the planar interface, so as to measure a spectrum.


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