The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 10, 2009
Filed:
Jan. 07, 2005
Jin-gyun Kim, Gyeonggi-do, KR;
Jae-young Ahn, Gyeonggi-do, KR;
Hee-seok Kim, Gyeonggi-do, KR;
Ju-wan Lim, Seoul, KR;
Jin-Gyun Kim, Gyeonggi-do, KR;
Jae-Young Ahn, Gyeonggi-do, KR;
Hee-Seok Kim, Gyeonggi-do, KR;
Ju-Wan Lim, Seoul, KR;
Abstract
The present invention provides nitrogenous compositions for forming a silicon nitride layer, wherein the nitrogenous composition comprises a hydrazine compound, an amine compound or a mixture thereof. The present invention further provides source compositions for forming a silicon nitride layer, wherein the source composition comprises a nitrogenous composition comprising a hydrazine compound, an amine compound or a mixture thereof, and a silicon source comprising hexachlorodisilane. Methods for forming silicon nitride layers are further provided. The silicon nitride layers provided herein may be formed on a substrate at a low temperature and may further exhibit improved breakdown voltage and an enhanced etch resistance.