The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 10, 2009
Filed:
Jul. 06, 2004
R. Suryanarayanan Iyer, Santa Clara, CA (US);
Andrew M. Lam, San Francisco, CA (US);
Yuji Maeda, Chiba, JP;
Thomas Mele, Livermore, CA (US);
Jacob W. Smith, Santa Clara, CA (US);
Sean M. Seutter, San Jose, CA (US);
Sanjeev Tandon, Sunnyvale, CA (US);
Randhir P. Singh Thakur, San Jose, CA (US);
Sunderraj Thirupapuliyur, Sunnyvale, CA (US);
R. Suryanarayanan Iyer, Santa Clara, CA (US);
Andrew M. Lam, San Francisco, CA (US);
Yuji Maeda, Chiba, JP;
Thomas Mele, Livermore, CA (US);
Jacob W. Smith, Santa Clara, CA (US);
Sean M. Seutter, San Jose, CA (US);
Sanjeev Tandon, Sunnyvale, CA (US);
Randhir P. Singh Thakur, San Jose, CA (US);
Sunderraj Thirupapuliyur, Sunnyvale, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
An assembly comprises a multilayer nitride stack having nitride etch stop layers formed on top of one another, each of the nitride etch stop layers is formed using a film forming process. A method of making the multilayer nitride stack includes placing a substrate in a single wafer deposition chamber and thermally shocking the substrate momentarily prior to deposition. A first nitride etch stop layer is deposited over the substrate. A second nitride etch stop layer is deposited over the first nitride etch stop layer.