The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 10, 2009
Filed:
Mar. 23, 2004
Akira Kobayashi, Yokohama, JP;
Tsunehisa Namiki, Yokohama, JP;
Hiroko Hosono, Yokohama, JP;
Hideo Kurashima, Yokohama, JP;
Hajime Inagaki, Yokohama, JP;
Toshihide Ieki, Yokohama, JP;
Akira Kobayashi, Yokohama, JP;
Tsunehisa Namiki, Yokohama, JP;
Hiroko Hosono, Yokohama, JP;
Hideo Kurashima, Yokohama, JP;
Hajime Inagaki, Yokohama, JP;
Toshihide Ieki, Yokohama, JP;
Toyo Seikan Kaisha, Ltd., Tokyo, JP;
Abstract
A method of forming a vapor deposited film of a silicon oxide on the surface of a substrate by holding the substrate to be treated in a plasma-treating chamber, and effecting the treatment with a chemical plasma by feeding an organosilicon compound and an oxidizing gas into the treating chamber, wherein the rate of feeding the oxidizing gas is varied while maintaining constant the rate of feeding the organosilicon compound gas into the plasma-treating chamber during the formation of the vapor deposited film. A chemical vapor deposited film is formed featuring excellent adhesiveness, softness, flexibility, oxygen-barrier property and water-barrier property.