The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 03, 2009
Filed:
Dec. 29, 2006
Hirokazu Tsurumaki, Tokyo, JP;
Hiroyuki Nagai, Tokyo, JP;
Tomio Furuya, Tokyo, JP;
Yoshiaki Harasawa, Tokyo, JP;
Makoto Tabei, Tokyo, JP;
Hirokazu Tsurumaki, Tokyo, JP;
Hiroyuki Nagai, Tokyo, JP;
Tomio Furuya, Tokyo, JP;
Yoshiaki Harasawa, Tokyo, JP;
Makoto Tabei, Tokyo, JP;
Renesas Technology Corp., Tokyo, JP;
Abstract
The present invention is directed to compensate electric properties of an RF power module depending on changes with time, temperature dependency, variations, and the like of grounded emitter current amplification factor of an HBT. A compound semiconductor integrated circuit supplies reference current of a reference HBT depending on hFE of an HBT to an input terminal of a first current mirror of a bias circuit of a silicon semiconductor integrated circuit. The base of an output HBT of the compound semiconductor integrated circuit is biased with bias current which increases in response to decrease in hFE of the HBT from an output of the first current mirror of the silicon semiconductor integrated circuit.