The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 03, 2009
Filed:
Nov. 06, 2007
Yao-wen Chang, Hsinchu, TW;
Hsing-wen Chang, Miaoli, TW;
Tao-cheng LU, Kaohsiung, TW;
Macronix International Co., Ltd., Hsinchu, TW;
Abstract
A method for measuring intrinsic capacitance of a MOS device is provided. The MOS device includes a first terminal, a second terminal, a third terminal and a fourth terminal. First, provide a first input signal to the second terminal and ground the third terminal and fourth terminal. Then, charge the first terminal and measure a first current required for charging the first terminal. Afterward, provide a second input signal to the second terminal, ground the third terminal and the fourth terminal, and measure a second current required for charging the first terminal, wherein the first input signal and the second input signal have the same low level, but different high levels. Finally, determine intrinsic capacitance between the first terminal and the second terminal according to the first current, the second current and a high level difference between the first input signal and the second input signal.