The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 03, 2009
Filed:
May. 25, 2007
Louis D. Lanzerotti, Burlington, VT (US);
Max G. Levy, Essex Junction, VT (US);
Yun Shi, South Burlington, VT (US);
Steven H. Voldman, South Burlington, VT (US);
Louis D. Lanzerotti, Burlington, VT (US);
Max G. Levy, Essex Junction, VT (US);
Yun Shi, South Burlington, VT (US);
Steven H. Voldman, South Burlington, VT (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A through via in an ultra high resistivity wafer and related methods are disclosed. A method for forming a through via comprises: providing a semiconductor wafer including a first silicon layer, a buried dielectric layer, and a substrate; forming a device on the first silicon; and forming a via from a side of the substrate opposite to the buried dielectric layer and through the substrate. Also disclosed is a method for providing a wafer varied resistivity using the through vias and buried dielectric.