The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7485915 B1

PDF
Full Text
Expired
Date of Patent:
Feb. 03, 2009

Filed:

May. 05, 2006
Applicants:

Hayato Nasu, Soka, JP;

Takamasa Usui, Tokyo, JP;

Hideki Shibata, Yokohama, JP;

Inventors:

Hayato Nasu, Soka, JP;

Takamasa Usui, Tokyo, JP;

Hideki Shibata, Yokohama, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/108 (2006.01); H01L 29/04 (2006.01); H01L 29/12 (2006.01); H01L 29/76 (2006.01); H01L 31/036 (2006.01); H01L 31/112 (2006.01); H01L 29/786 (2006.01); H01L 29/94 (2006.01); H01L 31/908 (2006.01); H01L 29/00 (2006.01); H01L 23/48 (2006.01); H01L 23/52 (2006.01);
U.S. Cl.
CPC ...
Abstract

A semiconductor device includes a capacitor which includes a capacitor insulating film at least including a first insulating film and a ferroelectric film formed in contact with the first insulating film, containing a compound of a preset metal element and a constituent element of the first insulating film as a main component and having a dielectric constant larger than that of the first insulating film, a first capacitor electrode formed of one of Cu and a material containing Cu as a main component, and a second capacitor electrode formed to sandwich the capacitor insulating film in cooperation with the first capacitor electrode.


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