The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 03, 2009
Filed:
Aug. 01, 2006
Ky-hyun Han, Ichon-shi, KR;
Sang-soo Park, Ichon-shi, KR;
Ky-Hyun Han, Ichon-shi, KR;
Sang-Soo Park, Ichon-shi, KR;
Hynix Semiconductor Inc., Kyoungki-do, KR;
Abstract
A method for fabricating a semiconductor device having a flask type recess gate includes forming a hard mask pattern on a substrate, etching the substrate to a predetermined depth using the hard mask pattern to form a first recess pattern, forming a passivation layer on sidewalls of the first recess pattern and the hard mask pattern, etching a bottom surface of the first recess pattern exposed by the passivation layer to form a second recess pattern, oxidizing sidewalls of the second recess pattern to form a silicon oxide layer, removing the passivation layer and the silicon oxide layer in sequential order, and forming a gate pattern over an intended recess pattern including the first recess pattern and the second recess pattern.