The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 03, 2009
Filed:
Oct. 16, 2006
Shunpei Yamazaki, Setagaya, JP;
Hisashi Ohtani, Atsugi, JP;
Toru Mitsuki, Atsugi, JP;
Hideto Ohnuma, Atsugi, JP;
Tamae Takano, Atsugi, JP;
Kenji Kasahara, Atsugi, JP;
Koji Dairiki, Atsugi, JP;
Shunpei Yamazaki, Setagaya, JP;
Hisashi Ohtani, Atsugi, JP;
Toru Mitsuki, Atsugi, JP;
Hideto Ohnuma, Atsugi, JP;
Tamae Takano, Atsugi, JP;
Kenji Kasahara, Atsugi, JP;
Koji Dairiki, Atsugi, JP;
Semiconductor Energy Laboratory Co., Ltd., Kanagawa-ken, JP;
Abstract
A first amorphous semiconductor film is formed on an insulating surface. A catalyst element for promoting crystallization is added thereto. Thereafter, by a first heat treatment in an inert gas, a first crystalline semiconductor film is formed. A barrier layer and a second semiconductor layer are formed on the first crystalline semiconductor film. The second semiconductor layer contains a rare gas element at a concentration of 1×10to 2×10/cm, preferably 1×10to 1×10/cmand oxygen at a concentration of 5×10to 1×10/cm. Subsequently, by a second treatment in an inert gas, the catalyst element remaining in the first crystalline semiconductor film is moved to the second semiconductor film.