The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 03, 2009
Filed:
Sep. 14, 2007
Yoshiaki Nakazaki, Saitama, JP;
Genshiro Kawachi, Chiba, JP;
Terunori Warabisako, Nishitama-gun, JP;
Masakiyo Matsumura, Kamakura, JP;
Yoshiaki Nakazaki, Saitama, JP;
Genshiro Kawachi, Chiba, JP;
Terunori Warabisako, Nishitama-gun, JP;
Masakiyo Matsumura, Kamakura, JP;
Advanced LCD Technologies Development Center Co., Ltd., Yokohama-shi, JP;
Abstract
The present invention provides a thin-film transistor offering a higher electron (or hole) mobility, a method for manufacturing the thin-film transistor, and a display using the thin-film transistor. The present invention provides a thin-film transistor having a source region, a channel region, and a drain region in a semiconductor thin film with a crystal grown in a horizontal direction, the thin-film transistor having a gate insulating film and a gate electrode over the channel region, wherein a drain edge of the drain region which is adjacent to the channel region is formed in the vicinity of a crystal growth end position.