The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 27, 2009
Filed:
Aug. 07, 2006
Koichi Shigematsu, Tokyo, JP;
Satoshi Kobayashi, Tokyo, JP;
Kiyoshi Ohsuga, Tokyo, JP;
Disco Corporation, Tokyo, JP;
Abstract
A method of laser processing a liquid crystal device wafer which is formed by laminating together a silicon substrate and a glass substrate, and has liquid crystal devices in respective rectangular areas sectioned by streets arranged in a lattice pattern on the front surface, the method comprising: a first deteriorated layer forming step for forming a deteriorated layer along the streets in the inside of the silicon substrate by applying a laser beam of a wavelength capable of passing through the silicone substrate and forming a deteriorated layer in the inside of the silicon substrate from the glass substrate side with its focal point set to the inside of the silicon substrate; and a second deteriorated layer forming step for forming a deteriorated layer along the streets in the inside of the glass substrate by applying a laser beam of a wavelength capable of passing through the glass substrate and forming a deteriorated layer in the inside of the glass substrate with its focal point set to the inside of the glass substrate.