The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 27, 2009

Filed:

Dec. 13, 2006
Applicants:

Shine Chung, Taipei Hsien, TW;

Jonathan Hung, Hsinchu, TW;

Inventors:

Shine Chung, Taipei Hsien, TW;

Jonathan Hung, Hsinchu, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G05F 1/10 (2006.01); G05F 3/02 (2006.01);
U.S. Cl.
CPC ...
Abstract

A temperature-sensitive current source includes a first MOS transistor having a source coupled to a first voltage; a second MOS transistor having a source coupled to the first voltage, and a gate coupled to a gate of the first MOS transistor, such that a current output at a drain of the second MOS transistor mirrors a current passing across the first MOS transistor; and a resistor coupled between the source and a drain of the first MOS transistor in parallel, such that the current passing across the first MOS transistor is substantially larger than a current passing through the resistor, wherein the first and second MOS transistors operate in a saturation mode, such that the output current at the drain of the second MOS transistor is responsive to a change of temperature.


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