The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 27, 2009
Filed:
Sep. 07, 2006
Applicants:
Kwang-soo Seol, Suwon-si, KR;
Shin-ae Jun, Seongnam-si, KR;
Eun-joo Jang, Daejeon-si, KR;
Jung-eun Lim, Seongnam-si, KR;
Kyung-sang Cho, Gwacheon-si, KR;
Byung-ki Kim, Gunpo-si, KR;
Jae-ho Lee, Yongin-si, KR;
Jae-young Choi, Suwon-si, KR;
Inventors:
Kwang-soo Seol, Suwon-si, KR;
Shin-ae Jun, Seongnam-si, KR;
Eun-joo Jang, Daejeon-si, KR;
Jung-eun Lim, Seongnam-si, KR;
Kyung-sang Cho, Gwacheon-si, KR;
Byung-ki Kim, Gunpo-si, KR;
Jae-ho Lee, Yongin-si, KR;
Jae-young Choi, Suwon-si, KR;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 31/00 (2006.01); H01L 29/788 (2006.01);
U.S. Cl.
CPC ...
Abstract
Provided are a charge trap memory device including a substrate and a gate structure including a charge trapping layer formed of a composite of nanoparticles, and a method of manufacturing the charge trap memory device.