The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 27, 2009
Filed:
Jan. 06, 2005
Hiroyuki Kato, Tokyo, JP;
Kazuhiro Miyamoto, Tokyo, JP;
Michihiro Sano, Tokyo, JP;
Takafumi Yao, Sendai, JP;
Hiroyuki Kato, Tokyo, JP;
Kazuhiro Miyamoto, Tokyo, JP;
Michihiro Sano, Tokyo, JP;
Takafumi Yao, Sendai, JP;
Stanley Electric Co., Ltd., Tokyo, JP;
Other;
Abstract
A method for manufacturing a semiconductor device includes the steps of: (a) preparing a non-polar single crystal substrate; (b) epitaxially growing an MgO layer on the non-polar single crystal substrate to a thickness of 3 nm or thicker to have rocksalt structure at a substrate temperature of 500° C. to 800° C.; (c) growing on the MgO layer a low temperature growth layer made of ZnO group material at a substrate temperature of 500° C. or lower; (d) annealing the low temperature growth layer above the substrate at a temperature of 700° C. or higher; and (e) epitaxially growing a high temperature growth layer of ZnO group material on the annealed low temperature growth layer at a temperature of 600° C. or higher.