The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 27, 2009
Filed:
Mar. 22, 2006
Tatsuya Usami, Kanagawa, JP;
Noboru Morita, Kanagawa, JP;
Tatsuya Usami, Kanagawa, JP;
Noboru Morita, Kanagawa, JP;
NEC Electronics Corporation, Kanagawa, JP;
Abstract
An object of the present invention is to improve the inter-layer adhesiveness of the diffusion barrier film while maintaining the lower dielectric constant of the diffusion barrier film. A diffusion barrier film for a copper interconnect comprises an insulating material containing silicon, carbon, hydrogen and nitrogen as constituent elements, and also containing Si—H bond, Si—C bond and methylene bond (—CH—). The insulating material involves I/Iof not lower than 0.067 and I/Iof not higher than 0.0067 appeared in an infrared absorption spectrum; where Iis defined as an absorption area of the infrared absorption band having a peak near 810 cm, Iis defined as an absorption area of the infrared absorption band having a peak near 2,120 cmand Iis defined as an absorption area of the infrared absorption band having a peak near 1,250 cm.