The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 27, 2009

Filed:

Sep. 28, 2007
Applicants:

Mao-quan Chen, Changhua County, TW;

Ching-nan Hsiao, Kaohsiung County, TW;

Chung-lin Huang, Tao-Yuan, TW;

Inventors:

Mao-Quan Chen, Changhua County, TW;

Ching-Nan Hsiao, Kaohsiung County, TW;

Chung-Lin Huang, Tao-Yuan, TW;

Assignee:

Nanya Technology Corp., Kueishan, Tao-Yuan Hsien, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/8247 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method for manufacturing a flash memory includes providing a substrate with a sacrificial oxide layer, a sacrificial poly-Si layer, a hard mask layer and a trench exposing part of the substrate and filled with an oxide layer, later depositing a oxide layer conformally on the sacrificial oxide layer and the oxide layer, and afterwards removing the oxide layer on the sacrificial oxide layer and on the top of the oxide layer and the sacrificial oxide layer to form a spacer as a STI oxide spacer.


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