The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 27, 2009

Filed:

Sep. 29, 2003
Applicants:

Shuhei Yamada, Nagoya, JP;

Akihiro Kawase, Kasugai, JP;

Inventors:

Shuhei Yamada, Nagoya, JP;

Akihiro Kawase, Kasugai, JP;

Assignee:

Fujimi Incorporated, Nishikasugai-gun, Aichi, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C09K 5/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A polishing composition of the present invention, which is used in precision polishing the surface of a wafer for semiconductor devices, remarkably reduces haze that occurs on the surface of the wafer. The polishing composition includes silicon dioxide, an alkaline compound, a water-soluble polymer, and water. The silicon dioxide is colloidal silica or fumed silica. The average primary particle diameter Dof the colloidal silica is from 5 to 30 nm, and the average secondary particle diameter Dof the colloidal silica is from 5 to 120 nm. The average primary particle diameter Dof the fumed silica is from 5 to 30 nm, and the average secondary particle diameter Dof the fumed silica is from 5 to 200 nm.


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