The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 20, 2009
Filed:
Nov. 07, 2006
Akira Umezawa, Tokyo, JP;
Akira Umezawa, Tokyo, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A semiconductor memory device includes memory cells, bit lines, source lines, and first and second voltage supply circuits. The memory cell includes a MOS transistor. The bit line connects in common drains of the MOS transistors. The source line electrically connects in common sources of the MOS transistors. The first voltage supply circuit applies voltages to the bit lines so that a first potential difference is made between the adjacent bit lines and so that a second potential difference smaller than the first potential difference is made between the bit lines adjacent to each other across the source line. The second voltage supply circuit applies voltages to the source lines so that a third potential difference larger than the second potential difference is made between the source line and bit line adjacent to each other.