The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 13, 2009
Filed:
Feb. 22, 2006
Applicants:
Nigel Peter Smith, Hsinchu, TW;
Yi-sha Ku, Hsinchu, TW;
Hsiu-lan Pang, Hsinchu, TW;
Inventors:
Assignee:
Nanometrics Incorporated, Milpitas, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01N 21/55 (2006.01);
U.S. Cl.
CPC ...
Abstract
In systems and methods measure overlay error in semiconductor device manufacturing based on target image asymmetry. As a result, the advantages of using very small in-chip targets can be achieved, while their disadvantages are reduced or eliminated. Methods for determining overlay error based on measured asymmetry can be used with existing measurement tools and systems. These methods allow for improved manufacturing of semiconductor devices and similar devices formed from layers.