The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 13, 2009

Filed:

May. 30, 2007
Applicants:

Horii Hideki, Seoul, KR;

Bong-jin Kuh, Gyeonggi-do, KR;

Yong-ho Ha, Gyeonggi-do, KR;

Jeong-hee Park, Gyeonggi-do, KR;

Ji-hye Yi, Gyeonggi-do, KR;

Inventors:

Horii Hideki, Seoul, KR;

Bong-Jin Kuh, Gyeonggi-do, KR;

Yong-Ho Ha, Gyeonggi-do, KR;

Jeong-hee Park, Gyeonggi-do, KR;

Ji-Hye Yi, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/148 (2006.01); H01L 29/768 (2006.01);
U.S. Cl.
CPC ...
Abstract

A phase-changeable memory device includes a substrate having a field effect transistor therein and a phase-changeable material electrically coupled to a source region of the field effect transistor. The phase-changeable material includes a chalcogenide composition containing at least germanium, bismuth and tellurium and at least one dopant selected from a group consisting of nitrogen and silicon.


Find Patent Forward Citations

Hideki, Horii. (2009). Phase-changeable memory devices including nitrogen and/or silicon dopants (U.S. Patent No. 7476917). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7476917

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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