The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 13, 2009
Filed:
Sep. 29, 2005
Sung-kwon Lee, Kyoungki-do, KR;
Dong-duk Lee, Kyoungki-do, KR;
Sung-Kwon Lee, Kyoungki-do, KR;
Dong-Duk Lee, Kyoungki-do, KR;
Hynix Semiconductor, Inc., Kyoungki-do, KR;
Abstract
Disclosed is a method for fabricating a semiconductor device. The method includes: forming a first inter-layer insulation layer on a substrate provided with a plurality of cell contact plugs; selectively etching the first inter-layer insulation layer to form a plurality of first contact holes; performing a cleaning process to remove etch residues on lower portions of the first contact holes; forming insulating fences on inner walls of the first contact holes; forming a plurality of bit lines in contact with a group of the cell contact plugs through the respective first contact holes; forming a second inter-layer insulation layer over the plurality of bit lines; planarizing the second inter-layer insulation layer until an upper portion of each of the bit lines is exposed; and selectively etching the second inter-layer insulation layer in alignment with the bit lines, thereby obtaining a plurality of second contact holes.