Method for determining focus deviation amount in pattern exposure and pattern exposure method

Abstract

A plurality of first measurement patterns each including a protruding pattern formed of a resist film and a recessed pattern having a space with a shape corresponding to the protruding pattern are formed on a first substrate such that they have different focus values at a time of exposure, edge inclination amounts of the plurality of first measurement patterns are measured, and a focus dependence () of the edge inclination amounts is obtained based on correspondences () and () between the edge inclination amounts and the focus values. A second measurement pattern including the protruding pattern and the recessed pattern is formed on a second substrate so as to measure edge inclination amounts of the second measurement pattern, and a focus deviation amount deviating from a best focus at the time of exposure of the second measurement pattern is calculated from the edge inclination amounts of the second measurement pattern based on the focus dependence of the edge inclination amounts. A dimension of the protruding pattern and a dimension of the space of the recessed pattern are set to be different so that best focus values at the time of exposing the protruding pattern and the recessed pattern become closer.