The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 06, 2009
Filed:
May. 28, 2004
Hirofumi Fukumoto, Toyama, JP;
Naohiko Ujimaru, Tonami, JP;
Ken-ichi Asahi, Imizu-gun, JP;
Fumio Iwamoto, Ikoma, JP;
Hirofumi Fukumoto, Toyama, JP;
Naohiko Ujimaru, Tonami, JP;
Ken-ichi Asahi, Imizu-gun, JP;
Fumio Iwamoto, Ikoma, JP;
Panasonic Corporation, Osaka, JP;
Abstract
A plurality of first measurement patterns each including a protruding pattern formed of a resist film and a recessed pattern having a space with a shape corresponding to the protruding pattern are formed on a first substrate such that they have different focus values at a time of exposure, edge inclination amounts of the plurality of first measurement patterns are measured, and a focus dependence () of the edge inclination amounts is obtained based on correspondences () and () between the edge inclination amounts and the focus values. A second measurement pattern including the protruding pattern and the recessed pattern is formed on a second substrate so as to measure edge inclination amounts of the second measurement pattern, and a focus deviation amount deviating from a best focus at the time of exposure of the second measurement pattern is calculated from the edge inclination amounts of the second measurement pattern based on the focus dependence of the edge inclination amounts. A dimension of the protruding pattern and a dimension of the space of the recessed pattern are set to be different so that best focus values at the time of exposing the protruding pattern and the recessed pattern become closer.