The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 06, 2009
Filed:
Nov. 05, 2004
Masami Makuuchi, Yokohama, JP;
Norio Chujo, Tokyo, JP;
Kengo Imagawa, Fujisawa, JP;
Ritsuro Orihashi, Tokyo, JP;
Yoshitomo Arai, Ohme, JP;
Masami Makuuchi, Yokohama, JP;
Norio Chujo, Tokyo, JP;
Kengo Imagawa, Fujisawa, JP;
Ritsuro Orihashi, Tokyo, JP;
Yoshitomo Arai, Ohme, JP;
Renesas Technology Corp., Tokyo, JP;
Abstract
A semiconductor device according to the present invention has a liquid crystal driver circuit, and when gray-scale voltage thereof is tested, the gray-scale voltage (Vx) generated in a gray-scale voltage generator circuit provided therein is compared with reference voltage (e.g., Vx+ΔV) generated for testing the gray-scale voltage and the test result is output as binarized voltage from external terminals of the semiconductor device. This can speed up the gray-scale voltage test even in the case of higher gray scale in the liquid crystal driver circuit or increased number of output terminals of the semiconductor device. Therefore, it becomes possible to reduce the time and cost required for the test.