The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 06, 2009
Filed:
Jun. 17, 2005
Yaxin Wang, Fremont, CA (US);
Yuji Maeda, Sakae-machi, JP;
Thomas C. Mele, Livermore, CA (US);
Sean M. Seutter, San Jose, CA (US);
Sanjeev Tandon, Sunnyvale, CA (US);
R. Suryanarayanan Iyer, Santa Clara, CA (US);
Yaxin Wang, Fremont, CA (US);
Yuji Maeda, Sakae-machi, JP;
Thomas C. Mele, Livermore, CA (US);
Sean M. Seutter, San Jose, CA (US);
Sanjeev Tandon, Sunnyvale, CA (US);
R. Suryanarayanan Iyer, Santa Clara, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
Embodiments of the invention generally provide a method for depositing silicon-containing films. In one embodiment, a method for depositing silicon-containing material film on a substrate includes flowing a nitrogen and carbon containing chemical into a deposition chamber, flowing a silicon-containing source chemical having silicon-nitrogen bonds into the processing chamber, and heating the substrate disposed in the chamber to a temperature less than about 550 degrees Celsius. In another embodiment, the silicon containing chemical is trisilylamine and the nitrogen and carbon containing chemical is (CH)—N.