The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 06, 2009

Filed:

Jul. 20, 2006
Applicants:

Ching-yuan Ho, Hsinchu, TW;

Yung-hsiang Chen, Hsinchu, TW;

Inventors:

Ching-Yuan Ho, Hsinchu, TW;

Yung-Hsiang Chen, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/44 (2006.01); H01L 21/4763 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method for manufacturing a semiconductor device is provided. First, a first metal conductive line is formed, and then a semiconductor device is formed on the first metal conductive line. A dielectric layer is formed on the semiconductor device. A contact window is formed at a position in the dielectric layer corresponding to the first metal conductive line. Then, a metal plug is formed in the contact window. The metal plug is used as a mask for etching the semiconductor device, such that the etched semiconductor device takes the form of a shape corresponding to the metal plug. Through the manufacturing method, the semiconductor device is formed according to the shape of the metal plug and is completely aligned with the metal plug.


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