The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 06, 2009
Filed:
Oct. 04, 2006
Tatsuya Usami, Kanagawa, JP;
Noboru Morita, Kanagawa, JP;
Koichi Ohto, Kanagawa, JP;
NEC Electronics Corporation, Kanagawa, JP;
Abstract
A technology for inhibiting the dielectric breakdown occurred in a semiconductor device is provided. A semiconductor device includes a semiconductor substrate (not shown), an interlayer insulating filmformed on the semiconductor substrate and a multiple-layered insulating filmprovided on the interlayer insulating film. The semiconductor device also includes an electric conductor that extends through the multiple-layered insulating filmand includes a Cu filmand a barrier metal film. The barrier metal filmis covers side surfaces and a bottom surface of the Cu film. An insulating filmis disposed between the multiple-layered insulating filmand the electric conductor (i.e., Cu filmand barrier metal film).