The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 06, 2009
Filed:
Oct. 13, 2006
Applicants:
Erh Kun Lai, Taichung, TW;
Hang-ting Lue, Hsinchu, TW;
Kuang Yeu Hsieh, Hsinchu, TW;
Inventors:
Assignee:
Macronix International Co., Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/84 (2006.01);
U.S. Cl.
CPC ...
Abstract
A manufacturing method for stacked, non-volatile memory device provides a plurality of bitline layers and wordline layers with charge trapping structures. The bitline layers have a plurality of bitlines formed on an insulating layer, such as silicon on insulator technologies. The wordline layers are patterned with respective pluralities of wordlines and charge trapping structures, orthoganal to the bitlines.
Lai, Erh. (2009). Stacked thin film transistor, non-volatile memory devices and methods for fabricating the same (U.S. Patent No. 7473589). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7473589
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile