The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 06, 2009
Filed:
Nov. 04, 2004
Applicant:
Chieh-yuan Cheng, Hsin-Chu, TW;
Inventor:
Chieh-Yuan Cheng, Hsin-Chu, TW;
Assignee:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G03F 1/08 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method of repairing opaque defects on a photolithography mask avoids damage to the mask substrate while providing improved repair results. A chrome mask pattern is first covered with a layer of carbon, following which the entire mask is covered with a layer of photoresist. Portions of the photoresist are then etched away to expose the defect, while other portions remain covering the carbon. The defect is etched away while the carbon protects the adjacent areas of the chrome mask pattern. Following removal of the defect, the remaining areas of photoresist and carbon are then removed.