The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 30, 2008
Filed:
Dec. 20, 2005
Applicants:
Anthony Oates, Hsinchu, TW;
Denny Tang, Saratoga, CA (US);
Inventors:
Anthony Oates, Hsinchu, TW;
Denny Tang, Saratoga, CA (US);
Assignee:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01); G11C 5/08 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method and system for a high current semiconductor memory cell provides a semiconductor memory cell with two current carrying structures. At least one of the current carrying structures is segmented and formed of narrow wire segments from one or more levels coupled to wider connective squares of another level. The wire segments may be a conductive material and the connective squares a refractory material. The short length wire segments may include a length less than the average grain size of the material of which they are formed.