The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 30, 2008
Filed:
Oct. 06, 2004
Hidefumi Takaya, Aichi-ken, JP;
Kimimori Hamada, Toyota, JP;
Akira Kuroyanagi, Okazaki, JP;
Yasushi Okura, Toyokawa, JP;
Norihito Tokura, Okazaki, JP;
Hidefumi Takaya, Aichi-ken, JP;
Kimimori Hamada, Toyota, JP;
Akira Kuroyanagi, Okazaki, JP;
Yasushi Okura, Toyokawa, JP;
Norihito Tokura, Okazaki, JP;
Toyota Jidosha Kabushiki Kaisha, Toyota-shi, JP;
Denso Corporation, Kariya-shi, JP;
Abstract
The invention is intended to present an insulated gate type semiconductor device that can be manufactured easily and its manufacturing method while realizing both higher withstand voltage design and lower on-resistance design. The semiconductor device comprises N+ source region, N+ drain regionP− body regionand N− drift regionBy excavating part of the upper side of the semiconductor device, a gate trenchis formed. The gate trenchincorporates the gate electrode. A P floating regionis provided beneath the gate trenchA further trenchdiffering in depth from the gate trenchmay be formed, a P floating regionbeing provided beneath the trench