The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 30, 2008
Filed:
Jan. 08, 2007
Omar Zia, Austin, TX (US);
Nigel Cave, Austin, TX (US);
Venkat Kolagunta, Austin, TX (US);
Ruiqi Tian, Austin, TX (US);
Edward O. Travis, Austin, TX (US);
Omar Zia, Austin, TX (US);
Nigel Cave, Austin, TX (US);
Venkat Kolagunta, Austin, TX (US);
Ruiqi Tian, Austin, TX (US);
Edward O. Travis, Austin, TX (US);
Freescale Semiconductor, Inc., Austin, TX (US);
Abstract
A method for making a semiconductor device is provided which comprises (a) creating a first data set () which defines a first set of tiles () for a trench chemical mechanical polishing (CMP) process; (b) deriving a first trench CMP mask set () and at least one epitaxial growth mask set () from the first data set, wherein the at least one epitaxial growth mask set corresponds to tiles () present on first () and second () distinct semiconductor surfaces; (c) reconfiguring the first trench CMP mask set to account for the at least one epitaxial growth mask set, thereby defining a second trench CMP mask set (), wherein the second trench CMP mask set defines a set of trench CMP tiles; and (d) using the second trench CMP mask set to make a semiconductor device.