The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 30, 2008
Filed:
Feb. 23, 2006
Akihiko Ishibashi, Osaka, JP;
Toshiya Yokogawa, Nara, JP;
Kiyoshi Ohnaka, Sakai, JP;
Susumu Koike, Kawachinagano, JP;
Akihiko Ishibashi, Osaka, JP;
Toshiya Yokogawa, Nara, JP;
Kiyoshi Ohnaka, Sakai, JP;
Susumu Koike, Kawachinagano, JP;
Panasonics Corporation, Osaka, JP;
Abstract
The present invention relates to a semiconductor light emitting device comprising a sapphire substrate; a u-GaN layerthat is formed on top of the substrateand that comprises a plurality of concave portionsformed into band-like shapes with predetermined intervals therebetween; a regrown u-GaN layerformed on the u-Ga layer; a layered structure that is formed on the u-GaN layercomprises an n-GaN layer, an active layer, and a p-GaN layer; an n-type electrodeformed on the n-GaN layerexposed by removing a potion of the layered structure; and a transparent p-type electrodeformed on the p-GaN layer, wherein the p-type electrodeis an emission detection surface, and an air layer S is formed between the bottom surface of the u-GaN layerand the concave portions