The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 23, 2008

Filed:

Apr. 19, 2006
Applicant:

Liyang Zhang, West Hills, CA (US);

Inventor:

Liyang Zhang, West Hills, CA (US);

Assignee:

Silicon Storage Technology, Inc., Sunnyvale, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H04B 1/06 (2006.01);
U.S. Cl.
CPC ...
Abstract

RF power detector employing an envelope amplifier circuit and a current mirror circuit. The output of the current mirror circuit supplies a bias voltage for biasing the output of the envelope amplifier circuit. Furthermore, the output of the envelope amplifier circuit is fed back to the output of the current mirror circuit so as to reduce the magnitude of the bias signal according to the magnitude of the amplified RF signal envelope. In this manner, the overall gain of the RF power detector can be selectively reduced, resulting in an RF power detector having a more linearized dynamic range and greater ability to compensate for variation in gain caused by temperature.


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