The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 23, 2008
Filed:
Jul. 02, 2007
Applicants:
Tetsufumi Kawamura, Kokubunji, JP;
Hitoshi Kume, Musahino, JP;
Tsuyoshi Arigane, Akishima, JP;
Inventors:
Assignee:
Renesas Technology Corp., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
A highly-reliable semiconductor device is realized. For example, each memory cell of a nonvolatile memory included in the semiconductor device is configured to include a source and a drain formed in a P-well, a memory node which is formed on the P-well between the source and the drain via a tunnel insulator and is insulated from its periphery, and a control gate formed on the memory node via an interlayer insulator. When a programming operation using channel hot electrons is to be performed in such a configuration, the P-well is put into an electrically floating state.