The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 23, 2008
Filed:
Nov. 13, 2006
Dao-ping Wang, Hsinchu, TW;
Hung-jen Liao, Hsinchu, TW;
Kun Lung Chen, Taipei, TW;
Yung-lung Lin, Taichung, TW;
Jui-jen Wu, Hsinchu, TW;
Chen Yen-huei, Hsinchu, TW;
Dao-Ping Wang, Hsinchu, TW;
Hung-Jen Liao, Hsinchu, TW;
Kun Lung Chen, Taipei, TW;
Yung-Lung Lin, Taichung, TW;
Jui-Jen Wu, Hsinchu, TW;
Chen Yen-Huei, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Abstract
A system and method for writing a SRAM cell coupled to complimentary first and second bit-lines (BLs) is disclosed, the method comprising asserting a word-line (WL) selecting the SRAM cell to a first positive voltage, providing a second positive voltage at the first BL, providing a first negative voltage at the second BL, and asserting a plurality of WLs not selecting the SRAM cell to a second negative voltage, wherein the writing margin of the SRAM cell is increased.