The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 23, 2008
Filed:
Dec. 29, 2005
Dae Heok Kwon, Daejeon, KR;
Dae Heok Kwon, Daejeon, KR;
Dongbu Electronics Co., Ltd., Seoul, KR;
Abstract
A method of cleaning a silicon nitride layer on a substrate is provided to effectively remove negative-charged impurities such as polymer and particle from the silicon nitride layer. In the method, the zeta potential of the silicon nitride layer is changed from positive to negative, and then the silicon nitride layer is cleaned with a first solution selected from an alkali solution and an NC-2 solution. So the negatively-charged impurities can be easily removed due to a repulsion force. The substrate can be treated with spin scrubber or quick dump rinse before and/or after the changing of the zeta potential. To change the zeta potential, the substrate can be dipped into a second solution such as an SC-1 solution, an NC-2 solution, and an alkali solution.