The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 23, 2008
Filed:
Apr. 26, 2005
Vishwas Hardikar, Tempe, AZ (US);
Vishwas Hardikar, Tempe, AZ (US);
Novellus Systems, Inc., San Jose, CA (US);
Abstract
A method is provided for removing conductive material from a metal layer deposited on a wafer having die level thickness variations on its surface. The method includes contacting the metal layer with a composition capable of planarizing die level thickness variations while using a current having a current density within a range of between about 5 mA/cmand about 40 mA/cm, applying a first current to the wafer having a current density within a range of between about 5 mA/cmand about 20 mA/cmto remove a first portion of the metal layer to thereby planarize the wafer surface, and administering a second current to the wafer having a current density within a range of between about 20 mA/cmand about 40 mA/cmto remove a second portion of the metal layer and to leave a third portion of the metal layer on the wafer having a predetermined thickness.